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| MMBT3904TT1 General Purpose Transistors MMBT3904TT1 - NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com * Device Marking: MMBT3904TT1 = AM GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc MMBT3904TT1 COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (1) TA = 25C Derated above 25C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR-4 Board (2) TA = 25C Derated above 25C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range (1) FR-4 @ Minimum Pad (2) FR-4 @ 1.0 x 1.0 Inch Pad Symbol PD 200 1.6 RJA PD 300 2.4 RJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 600 mW Max Unit 3 mW/C C/W 2 1 CASE 463 SOT-416/SC-75 STYLE 1 DEVICE MARKING See Table ORDERING INFORMATION Device MMBT3904TT1 Package SOT-416 Shipping 3000 / Tape & Reel (c) Semiconductor Components Industries, LLC, 2001 1 October, 2001 - Rev. 1 Publication Order Number: MMBT3904TT1/D MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO 40 -40 V(BR)CBO 60 -40 V(BR)EBO 6.0 -5.0 IBL - - ICEX - - 50 -50 50 -50 nAdc - - nAdc - - Vdc - - Vdc Vdc ON CHARACTERISTICS (3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (3) Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. hFE 40 70 100 60 30 VCE(sat) - - VBE(sat) 0.65 - 0.85 0.95 0.2 0.3 Vdc - - 300 - - Vdc - r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 1. Normalized Thermal Response http://onsemi.com 2 MMBT3904TT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) fT 300 Cobo - Cibo - hie 1.0 hre 0.5 hfe 100 hoe 1.0 NF - 5.0 40 dB 400 mmhos 8.0 - 10 X 10-4 8.0 k 4.0 pF - pF MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) MMBT3904TT1 MMBT3904TT1 MMBT3904TT1 MMBT3904TT1 td tr ts tf - - - - 35 35 200 50 ns ns DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms t1 +3 V +10.9 V 275 10 k 1N916 CS < 4 pF* DUTY CYCLE = 2% 0 -0.5 V < 1 ns CS < 4 pF* -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 MMBT3904TT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 3.0 2.0 Cobo 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 Figure 5. Charge Data VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V 40 V 15 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-On Time 500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 ts = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) 500 300 200 100 70 50 30 20 10 7 5 Figure 7. Rise Time VCC = 40 V IB1 = IB2 IC/IB = 20 IC/IB = 20 IC/IB = 10 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Storage Time Figure 9. Fall Time http://onsemi.com 4 MMBT3904TT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 12 10 8 6 4 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f = 1.0 kHz IC = 1.0 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure Figure 11. Noise Figure h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 200 h fe , CURRENT GAIN 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.2 10 7.0 5.0 3.0 2.0 Figure 13. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 14. Input Impedance Figure 15. Voltage Feedback Ratio http://onsemi.com 5 MMBT3904TT1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C +25C MMBT3904WT1 VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 -55C 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 16. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.2 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25C 1.0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 0.5 0 -0.5 -1.0 -1.5 qVB FOR VBE(sat) 0 20 40 60 80 100 120 140 160 180 200 -55C TO +25C +25C TO +125C qVC FOR VCE(sat) -55C TO +25C +25C TO +125C VBE @ VCE =1.0 V 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 VCE(sat) @ IC/IB =10 -2.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. "ON" Voltages Figure 19. Temperature Coefficients http://onsemi.com 6 MMBT3904TT1 INFORMATION FOR USING THE SOT-416 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.5 min. (3x) Unit: mm 0.5 min. (3x) 1.4 SOT-416/SC-90 POWER DISSIPATION The power dissipation of the SOT-416/SC-90 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) - TA RJA the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 125 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into The 833C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 7 1 TYPICAL SOLDERING PATTERN EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.5 MMBT3904TT1 SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 RAMP" 200C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C STEP 6 STEP 7 VENT COOLING 205 TO 219C PEAK AT SOLDER JOINT DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C 150C 100C 100C 140C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) 50C DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 20. Typical Solder Heating Profile http://onsemi.com 8 MMBT3904TT1 PACKAGE DIMENSIONS SC-75 (SC-90, SOT-416) CASE 463-01 ISSUE B -A- S 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC G -B- 1 D 3 PL 0.20 (0.008) M B K 0.20 (0.008) A J C L STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR H STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE http://onsemi.com 9 MMBT3904TT1 Notes http://onsemi.com 10 MMBT3904TT1 Notes http://onsemi.com 11 MMBT3904TT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MMBT3904TT1/D |
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